Plasma immersion Ar+ ion implantation induced disorder in strained InGaAsP multiple quantum wells

Electronics Letters

Volumn 34, Issue 8, 1998, Pages 817-818

  Lam, L M ^a   Kwong, C W ^a   Ho, H P ^a   Pun, E Y B ^a   Chan, K S ^a   Fan, Z N ^a   Chu, P K ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; EMISSION SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS;

INTERMIXING EFFECTS; PLASMA IMMERSION ION IMPLANTATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032048633     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980513     Document Type: Article

References (10)

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