Low threshold 1.3μm InAsP MQW lasers using n-type modulation doping grown by gas-source molecular-beam epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 717-720

  Shimizu, H ^a   Kumada, K ^a   Yamanaka, N ^a   Iwai, N ^a   Mukaihara, T ^a   Nishikata, K ^a   Kasukawa, A ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

GAS SOURCE MOLECULAR BEAM EPITAXY; MODULATION DOPING; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0032287516     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)