A new contactless electrochemical etch-stop based on a gold/silicon/TMAH galvanic cell

Sensors and Actuators, A: Physical

Volumn 66, Issue 1-3, 1998, Pages 284-291

  Ashruf, Colin M A ^a   French, Patrick J ^a   Bressers, Peter M M C ^b   Sarro, Pasqualina M ^a   Kelly, John J ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UTRECHT UNIVERSITY   (Netherlands)

Author keywords

Electrochemical etching; Galvanic passivation; Tetramethyl ammonium hydroxide (TMAH)

Indexed keywords

AMMONIUM COMPOUNDS; ELECTROCHEMISTRY; ETCHING; GOLD; PASSIVATION; SILICON WAFERS;

ELECTROCHEMICAL ETCHING; GALVANIC PASSIVATION; TETRAMETHYL AMMONIUM HYDROXIDE;

SILICON SENSORS;

EID: 0032047215     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01711-1     Document Type: Article

References (17)

1. H. Seidel, L. Csepregi, A. Heuberger, H. Baumgärtel, Anisotropic etching of crystalline silicon in alkaline solutions II. Influence of dopants, J. Electrochem. Soc. 137 (1990) 3626-3632.
2. W.H. Chu, M. Mehregany, A study of residual stress distribution through the thickness of P+ silicon films, IEEE Trans. Electron Devices 40 (1993) 1245-1250.
3. X. Ding, W.H. Ko, J.M. Mansour, Residual stress and mechanical properties of borondoped p+-silicon films, Sensors and Actuators A21-A23 (1990) 866-871.
4. B. Kloeck, S.D. Collins, N.F. de Rooij, R.L. Smith, Study of electrochemical etch-stop for high-precision thickness control of silicon membranes, IEEE Trans. Electron Devices 36 (1989) 663-669.
5. P.M. Sarro, A.W. van Herwaarden, Silicon cantilever beams fabricated by electrochemically controlled etching for sensor applications, J. Electrochem. Soc. 133 (1986) 1724-1729.
6. E. Peeters, D. Lapadatu, R. Puers, W. Sansen, PHET, an electrodeless photovoltaic electrochemical etchstop technique, J. Microelectromech. Syst. 3 (1994) 113-123.
7. P.J. French, M. Nagao, M. Esashi, Electrochemical etch-stop in TMAH without externally applied bias, Sensors and Actuators A 56 (1996) 279-280.
8. E.D. Palik, O.J. Glembocki, I. Heard Jr., Study of bias-dependent etching of Si in aqueous KOH, J. Electrochem. Soc. 134 (1987) 404-409.
9. O.J. Glembocki, R.E. Stahlbush, Bias-dependent etching of silicon in aqueous KOH, J. Electrochem. Soc. 132 (1985) 145-151.
10. E.D. Palik, H.F. Gray, P.B. Klein, A Raman study of etching silicon in aqueous KOH, J. Electrochem. Soc. 130 (1983) 956-959.
11. A.J. Bard, L.R. Faulkner, Electrochemical Methods, Fundamentals and Applications, John Wiley, New York, 1980.
12. E.D. Palik, J.W. Faust Jr., H.F. Gray Jr., R.F. Greene Jr., Study of the etch-stop mechanism in silicon, J. Electrochem. Soc. 129 (1982) 2051-2059.
13. P.M.M.C. Bressers, S.A.S.P. Pagano, J.J. Kelly, Ferricyanide reduction as a probe for the surface chemistry of silicon in aqueous alkaline solutions, J. Electrochem. Soc. 391 (1995) 159-168.
14. D. Lapadatu, G. Kittilsland, M. Nese, S.M. Nilsen, H. Jakobsen, A model for the etch stop location on reversed biased pn junctions, Tech. Digest, 9th Int. Conf. Solid-State Sensors and Actuators (Transducers '97), Chicago, IL, USA, 16-19 June, 1997, pp. 715-716.
15. O. Tabata, R. Asahi, H. Funabashi, K. Shimaoka, S. Sugiyama, Anisotropic etching of silicon in TMAH solutions, Sensors and Actuators A 34 (1992) 51-57.
16. A. Merlos, M. Acero, M.H. Bao, J. Bausells, J. Esteve, TMAH/IPA anisotropic etching characteristics, Sensors and Actuators A 37-38 (1993) 737-743.
17. H. Seidel, L. Csepregi, A. Heuberger, H. Baumgärtel, Anisotropic etching of crystalline silicon in alkaline solutions I. Orientation dependence and behavior of passivation layers, J. Electrochem. Soc. 137 (1990) 3612-3626.