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Volumn 41, Issue 5, 1997, Pages 669-671

Base resistance measurements in HBTs using base-emitter reverse bias breakdown

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031141859     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00250-X     Document Type: Article
Times cited : (1)

References (4)
  • 4
    • 0003796043 scopus 로고
    • Tetronix Inc., Part # 062-2841-00. Beaverton, Oregon
    • Getreu, Ian Modeling the Bipolar Transistor, Tetronix Inc., Part # 062-2841-00. Beaverton, Oregon, 1976.
    • (1976) Modeling the Bipolar Transistor
    • Getreu, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.