Base resistance measurements in HBTs using base-emitter reverse bias breakdown

Solid-State Electronics

Volumn 41, Issue 5, 1997, Pages 669-671

  Hanington, G ^a   Asbeck, P M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

BASE EMITTER REVERSE BIAS BREAKDOWN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031141859     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00250-X     Document Type: Article

References (4)

1. Ning, T. H. and Tang, D. D., IEEE Transactions of Electron Devices, 1984, ED-31, 409.
2. Sze, S. M., Physics of Semiconductor Devices. Wiley, 1981.
3. Gibbons, G. and Sze, S. M., Solid State Electronics, 1968, 11, 225.
4. Getreu, Ian Modeling the Bipolar Transistor, Tetronix Inc., Part # 062-2841-00. Beaverton, Oregon, 1976.