Investigation of the importance of high-level injection in abrupt HBTs

Solid-State Electronics

Volumn 39, Issue 7, 1996, Pages 1021-1025

  Adhikari, N ^a   El Nokali, M ^a  

^a University of Pittsburgh   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; DIFFUSION; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

COLLECTOR CURRENT; HIGH LEVEL INJECTION EFFECTS; HOLE CONCENTRATION; MAXIMUM CURRENT GAIN; THERMIONIC FIELD EMISSION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030193642     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00399-1     Document Type: Review

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