Discussion on physical models for burst noise in a forward biased P-N junction and their experimental validation

Microelectronics Reliability

Volumn 38, Issue 4, 1998, Pages 671-675

  Dai, Yisong ^a   Li, Yaqin ^a   Xu, Jiansheng ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; WAVEFORM ANALYSIS;

BURST NOISE MODELS; RANDOM TELEGRAPH SIGNALS (RTS);

SEMICONDUCTOR JUNCTIONS;

EID: 0032044888     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00232-1     Document Type: Article

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