The dependence of the optical properties on the As mole fraction in modulation-doped InAsxP1-x/InP strained single quantum wells

Solid State Communications

Volumn 106, Issue 1, 1998, Pages 17-20

  Kim, T W ^a  

^a Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; LIGHT MODULATION; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

HALL EFFECT MEASUREMENT; MOLE FRACTION; PHOTOLUMINESCENCE MEASUREMENT; SCHUBNIKOV-DE HAAS MEASUREMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032040787     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)10246-0     Document Type: Article

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