A U-grooved metal-semiconductor-metal photodetector (UMSM-PD) with an i-a-Si:H overlay er on a [100] P-Type Si wafer

IEEE Photonics Technology Letters

Volumn 10, Issue 4, 1998, Pages 579-581

  Laih, Li Hong ^b   Chang, Tien Chang ^b   Chen, Yen Ann ^a,b   Tsay, Wen Chin ^a,b   Hong, Jyh Wong ^b  

^a IEEE

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Heterojunction; Intrinsic hydrogenated amorphous silicon; Metal semiconductor metal (MSM); Photodetector; Planar; U Grooved

Indexed keywords

AMORPHOUS SILICON; CURRENT DENSITY; HETEROJUNCTIONS; LIGHT ABSORPTION; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR METAL BOUNDARIES; SILICON WAFERS;

FULL WIDTH AT HALF MAXIMUM (FWHM); INTRINSIC HYDROGENATED AMORPHOUS SILICON;

PHOTODETECTORS;

EID: 0032037497     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.662600     Document Type: Article

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