A systematic empirical study of the effect of well number and length on the temperature sensitivity of the threshold current in InGaAsP-InP MQW lasers

IEEE Journal of Quantum Electronics

Volumn 34, Issue 3, 1998, Pages 535-539

  Prosyk, Kelvin ^b   Simmons, John G ^a,b   Evans, J D ^c  

^a IEEE

^b MCMASTER UNIVERSITY   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

Current; Quantum well lasers; Ridge waveguides; Semiconductor device modeling; Semiconductor lasers; Temperature

Indexed keywords

CURRENT DENSITY; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; STATISTICAL METHODS; TEMPERATURE;

CONTINUOUS WAVE THRESHOLD CURRENT; OPTICAL GAIN; OPTICAL LOSS; TEMPERATURE SENSITIVITY; WELL NUMBER;

QUANTUM WELL LASERS;

EID: 0032026490     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.661463     Document Type: Article

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