Photoluminescence of semi-insulating InP wafers prepared by two-step wafer annealing

Journal of the Electrochemical Society

Volumn 145, Issue 3, 1998, Pages 1048-1051

  Uchida, M ^a   Oda, O ^a   Warashina, M ^b   Tajima, M ^b  

^a JAPAN ENERGY CORPORATION   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICE MANUFACTURE;

SEMI-INSULATING WAFERS; SEMICONDUCTOR WAFERS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032023373     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838387     Document Type: Article

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