Analysis of semiconductors by ion channelling: Applications and pitfalls

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 453-459

  Williams, J S ^a   Conway, M ^a   Davies, J A ^b   Petravic, M ^a   Tan, H H ^a   Wong Leung, J ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b CANADIAN NUCLEAR LABORATORIES   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS;

CHANNELLING OSCILLATIONS; ION CHANNELLING;

SEMICONDUCTOR MATERIALS;

EID: 0032019028     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00721-0     Document Type: Article

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