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Volumn 55, Issue 20, 1997, Pages 13651-13657

Electronic stopping power of in Si in random and 〈100〉 channeling directions

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Indexed keywords


EID: 0000454388     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.13651     Document Type: Article
Times cited : (17)

References (28)
  • 24
    • 85037917526 scopus 로고    scopus 로고
    • P.L. Grande and G. Schiwietz (unpublished). The first-order Born calculations were performed for (Formula presented)+ Si with scaled hydrogenlike projectile wave functions, and target screening was accounted for.
    • Grande, P.1    Schiwietz, G.2
  • 26
    • 35949027438 scopus 로고
    • H.-D. Betz, Rev. Mod. Phys. 44, 465 (1972).
    • (1972) Rev. Mod. Phys. , vol.44 , pp. 465


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.