The effect of D.C. bias on the synthesis of crystalline carbon nitrides on silicon by microwave plasma enhanced chemical vapor deposition (CVD)

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 2 PART A, 1998, Pages

  Sung, Shing L ^a   Tsai, Tzeng G ^a   Huang, Kuen P ^b   Huang, Jin H ^a   Shih, Han C ^a,b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Crystalline carbon nitride; MPECVD; Negative dc bias; Si3N4

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DIFFRACTOMETERS; METHANE; MICROWAVES; NITROGEN; PLASMA APPLICATIONS; SILICON WAFERS; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON NITRIDES; MICROWAVE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (MPECVD); X RAY DIFFRACTOMETERS;

NITRIDES;

EID: 0032002676     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l148     Document Type: Article

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