Heat-treatment study of deep-level defects in semi-insulating liquid-encapsulated Czochralski gallium arsenide substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 19-22

  Yoshida, Hiroaki ^a   Kiyama, Makoto ^a   Takebe, Toshihiko ^a   Fujita, Keiichiro ^a   Akai, Shin Ichi ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Deep level; Defect; GaAs; Heat treatment; Thermally stimulated current

Indexed keywords

CZOCHRALSKI GALLIUM ARSENIDE SUBSTRATES; DEEP LEVEL DEFECTS; THERMALLY STIMULATED CURRENT TECHNIQUE;

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; SUBSTRATES; TEMPERATURE CONTROL; THERMAL EFFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030673706     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.19     Document Type: Article

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