Electrothermal simulation of an IGBT

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 1992-May, Issue , 1992, Pages 158-159

  Axelrad, V ^a   Klein, R ^b  

^a Technology Modeling Associates Inc   (United States)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

ELECTRO-THERMAL PROBLEM; ELECTRO-THERMAL SIMULATION; GOVERNING EQUATIONS; HEAT FLOW EQUATIONS; HIGH CURRENT DENSITIES; HIGH ELECTRIC FIELDS; SELF-CONSISTENT SIMULATIONS; SELF-HEATING EFFECT;

SEMICONDUCTOR DEVICES;

EID: 33749978081     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.1992.991254     Document Type: Conference Paper

References (2)

1. Technology Modeling Associates, Inc., Palo Alto, California, USA. MEDICI user's manual, Jan 1992.
2. B. J. Baliga, M. S. Adler, R. P. Love, P. V. Gray, and N. D. Zommer. The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device. IEEE Trans, on Electron Devices, ED-31(6), June 1984.