Mechanisms of formation and topological analysis of porous silicon - Computational modeling

Computational Materials Science

Volumn 10, Issue 1-4, 1998, Pages 406-410

  Aleksandrov, L N ^a   Novikov, P L ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Fractal dimension; Porous silicon; Quantum confinement

Indexed keywords

COMPUTER SIMULATION; FRACTALS; TOPOLOGY;

ANODIZATION; QUANTUM CONFINEMENT;

POROUS SILICON;

EID: 0031998483     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0927-0256(97)00182-1     Document Type: Article

References (14)

1. L.T. Canham, Appl. Phys. Lett. 57 (1990) 1046.
2. V. Lehmann, W. Honlein, H. Reisinger, A. Spitzer, H. Wendt, J. Willer, Thin Solid Films 276 (1996) 138.
3. S. Konaka, M. Tabe, T. Sakai, Appl. Phys. Lett. 41 (1982) 86.
4. V.G. Shengurov, V.N. Shabanov, N.V. Gudkova, B.Ja. Tkach, Microelectronika 22 (1993) 19.
5. L.N. Aleksandrov, P.L. Novikov, Phys. Stat. Sol. A 158 (1996) 419.
6. R.L. Smith, S.-F. Chuang, S.D. Collins, J. Electr. Mater. 17 (1988) 533.
7. V. Lehmann, U. Gæsele, Appl. Phys. Lett. 58 (1991) 856.
8. V. Lehmann, Thin Solid Films 255 (1995) 1.
9. Z.J. He, Y.P. Huang, R. Kwor, Thin Solid Films 265 (1995) 96.
10. L.N. Aleksandrov, P.L. Novikov, Pis'ma v ZhETF 65 (1997) 685.
11. B.B. Mandelbrot, The general properties of fractals, Proceedings of the 6th International Symposium on Fractals in Physics, Triest, Italy, 1985.
12. C.H. Lee, C.C. Yeh, H.L. Hwang, Klaus Y.J. Hsu, Thin Solid Films 276 (1996) 147.
13. E. Zur Muhlen, Da Chang, S. Rogashevski, H. Niehus, Phys. Stat. Sol. B 198 (1996) 673.
14. B.J. Heuser, S. Spooner, G.J. Glinka et al., Mat. Res. Soc. Symp. Proc. 283 (1993) 209.