Characterization of porous silicon-on-insulator films prepared by anodic oxidation

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 147-150

  Lee, C H ^a   Yeh, C C ^a   Hwang, H L ^a   Hsu, Klaus Y J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Electrochemistry; Oxidation; Oxides; Silicon

Indexed keywords

ANODIC OXIDATION; DENSITY (SPECIFIC GRAVITY); ELECTROCHEMISTRY; INTERFACES (MATERIALS); MORPHOLOGY; OXIDES; POROUS SILICON; SILICON ON INSULATOR TECHNOLOGY;

POROUS SILICON ON OXIDE STRUCTURES;

SEMICONDUCTING FILMS;

EID: 0030120824     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08076-7     Document Type: Article

References (8)

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7. C.H. Lee, C.C. Yeh and Klaus Y.J. Hsu, Appl. Surf. Sci., in press (1995).
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