On the bismuth composition dependent concentration of arsenic atoms during LPE growth of GaAs layers from Ga-As-Bi solution

Physica Status Solidi (A) Applied Research

Volumn 165, Issue 2, 1998, Pages 437-443

  Jeganathan, K ^a   Saravanan, S ^a   Baskar, K ^a   Kumar, J ^a  

^a ANNA UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BISMUTH; BOUNDARY CONDITIONS; CALCULATIONS; LIQUID PHASE EPITAXY; SEMICONDUCTING FILMS;

FILM THICKNESS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031997914     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199802)165:2<437::AID-PSSA437>3.0.CO;2-K     Document Type: Article

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