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Volumn 49, Issue 2, 1997, Pages 141-145

Investigations on the concentration profiles of arsenic atoms during liquid phase epitaxial growth of GaAs from Ga-As-Bi solution

(4) Jeganathan, K a Saravanan, S a Baskar, K a Kumar, J a

a ANNA UNIVERSITY (India)

Author keywords

Concentration profile; Diffusion; Ga As Bi solution; GaAs; LPE

Indexed keywords

ARSENIC; ATOMS; BOUNDARY CONDITIONS; COMPUTATIONAL METHODS; COOLING; DIFFUSION IN SOLIDS; LIQUID PHASE EPITAXY; MATHEMATICAL MODELS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

DIFFUSIVE TRANSPORT MODEL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031163919 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(96)01926-8 Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.