High quality GaAs epitaxial layers grown from Ga-As-Bi solutions by liquid phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3385-3388

  Saravanan, S ^a   Jeganathan, K ^a   Baskar, K ^b   Kumar, J ^a   Subramanian, C ^a   Soga, T ^c   Jimbo, T ^c,d   Arora, B M ^e   Umeno, M ^b  

^a ANNA UNIVERSITY   (India)

^b Electrical and Computer Engineering

^c Dept Environ Technol Urban Plan ^*

^d NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^e TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

Arsenide; Bismuth; Edge growth; Epitaxy; GaAs; Gallium; LPE; Photoluminescence; Solubility; Solvents

Indexed keywords

EPITAXIAL LAYER; LIQUIDUS ISOTHERM;

ARSENIC; BISMUTH; GALLIUM; ISOTHERMS; LIQUID PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SOLUBILITY; SOLUTIONS; SOLVENTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031164252     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3385     Document Type: Article

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