Modeling and Simulation of Uniformity Effects in Cd1-xZnxTe Gamma-Ray Spectrometers

IEEE Transactions on Nuclear Science

Volumn 45, Issue 1, 1998, Pages 105-113

  Toney, J E ^a,b,c,d   Schlesinger, T E ^a,b,c,d   James, R B ^a,b,c,d  

^a IEEE   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Cadmium zinc telluride; Material nonuniformity; Monte carlo simulation; Radiation detectors

Indexed keywords

CHARGE CARRIERS; COMPOSITION EFFECTS; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; GRAIN BOUNDARIES; MATHEMATICAL MODELS; MONTE CARLO METHODS; RADIATION DETECTORS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING CADMIUM COMPOUNDS; SPECTRUM ANALYSIS;

BRIDGMAN CRYSTAL GROWTH; CADMIUM ZINC TELLURIDE DETECTORS;

GAMMA RAY SPECTROMETERS;

EID: 0031996767     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659560     Document Type: Article

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