Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 449-452

  Godet, Christian ^a   Morin, Phil ^a   Roca I Cabarrocas, Pere ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; FILM GROWTH; HIGH INTENSITY LIGHT; HYDROGEN; HYDROGENATION; LIGHT ABSORPTION; MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; SILICON SOLAR CELLS;

DILUTE PHASE SILICON HYDROGEN BOND CONCENTRATION; HIGH INTENSITY ILLUMINATION; HYDROGENATED AMORPHOUS SILICON; LIGHT INDUCED DEFECT ANNEALING; LIGHT INDUCED DEFECT CREATION; METASTABILITY PHENOMENA; STEADY STATE DEFECT DENSITY;

AMORPHOUS FILMS;

EID: 0030563487     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00727-X     Document Type: Article

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