Radiation damage of amorphous silicon, thin-film, field-effect transistors

Medical Physics

Volumn 23, Issue 5, 1996, Pages 743-754

  Boudry, J M ^a   Antonuk, L E ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

amorphous silicon; field effect transistor; radiation damage; thin film transistor

Indexed keywords

AMORPHOUS SILICON; ANNEALING; DRAIN CURRENT; FLUORESCENT SCREENS; IRRADIATION; LEAKAGE CURRENTS; MEDICAL IMAGING; RADIATION DAMAGE; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; X RAY RADIOGRAPHY;

DRAIN-SOURCE CURRENTS; FIELD EFFECT TRANSISTOR (FETS); HYDROGENATED AMORPHOUS SILICON (A-SI:H); NEGATIVE GATE VOLTAGES; RADIATION MEASUREMENTS; ROOM TEMPERATURE ANNEALING; TRANSFER CHARACTERISTICS; X-RAY MEDICAL IMAGING;

FIELD EFFECT TRANSISTORS;

SILICON;

ARTICLE; FLUOROSCOPY; MAMMOGRAPHY; PRIORITY JOURNAL; RADIATION INJURY; SEMICONDUCTOR; TEMPERATURE; THORAX RADIOGRAPHY; X RAY;

EID: 0030023651     PISSN: 00942405     EISSN: None     Source Type: Journal    
DOI: 10.1118/1.597668     Document Type: Article

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