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Volumn 36, Issue 6, 1989, Pages 1858-1864

Dose dependence of interface traps in gate oxides at high levels of total dose

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; OXIDES;

EID: 0024890329     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45379     Document Type: Article
Times cited : (19)

References (22)
  • 1
    • 84934588160 scopus 로고
    • Mechanisms of Charge Buildup in MOS Insulators
    • W. C. Johnson, “Mechanisms of Charge Buildup in MOS Insulators”, IEEE Trans. Nucl. Sci., NS-22, 2144, (1975).
    • (1975) IEEE Trans. Nucl. Sci , vol.NS-22 , pp. 2144
    • Johnson, W.C.1
  • 2
    • 0017242346 scopus 로고
    • Hole Transport and Recovery Characteristics of SiO2 Gate Insulators
    • F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, “Hole Transport and Recovery Characteristics of SiO2 Gate Insulators”, IEEE Trans. Nucl. Sci., NS-23, 1506, (1976).
    • (1976) IEEE Trans. Nucl. Sci , vol.NS-23 , pp. 1506
    • McLean, F.B.1    Boesch, H.E.2    McGarrity, J.M.3
  • 3
    • 0017242350 scopus 로고
    • Model for Thickness Dependence of Radiation Charging in MOS Structures
    • C. R. Viswanathan, “Model for Thickness Dependence of Radiation Charging in MOS Structures”, IEEE Trans. Nucl. Sci., NS-23, 1540, (1976).
    • (1976) IEEE Trans. Nucl. Sci , vol.NS-23 , pp. 1540
    • Viswanathan, C.R.1
  • 5
    • 0019242095 scopus 로고
    • A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
    • F. B. McLean, “A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures”, IEEE Trans. Nucl. Sci., NS-27, 1651, (1980).
    • (1980) IEEE Trans. Nucl. Sci , vol.NS-27 , pp. 1651
    • McLean, F.B.1
  • 6
    • 0023531269 scopus 로고
    • The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devces
    • J. R. Schwank, et al., “The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devces”, IEEE Trans. Nucl. Sci., NS-34, 1152, (1987).
    • (1987) IEEE Trans. Nucl. Sci , vol.NS-34 , pp. 1152
    • Schwank, J.R.1
  • 7
    • 84939035653 scopus 로고
    • Optimizing and Controlling the Radiation Hardness of a Si-Gate CMOS Process
    • P. S. Winokur, et al., “Optimizing and Controlling the Radiation Hardness of a Si-Gate CMOS Process” IEEE Trans. Nucl. Sci., NS-32, 3954, (1985).
    • (1985) IEEE Trans. Nucl. Sci , vol.NS-32 , pp. 3954
    • Winokur, P.S.1
  • 8
    • 0024172673 scopus 로고
    • Dose and Energy Dependence of Interface Trap Formation in Cobalt-60 and X-ray Environments
    • J. M. Benedetto, H. E. Boesch, Jr., and F. B. McLean, “Dose and Energy Dependence of Interface Trap Formation in Cobalt-60 and X-ray Environments”, IEEE Trans. Nucl. Sci., NS-35, 1260, (1988).
    • (1988) IEEE Trans. Nucl. Sci , vol.NS-35 , pp. 1260
    • Benedetto, J.M.1    Boesch, H.E.2    McLean, F.B.3
  • 9
    • 0022232569 scopus 로고
    • Accounting for Dose Enhancement Effects with CMOS Transistors
    • D. M. Fleetwood et al., “Accounting for Dose Enhancement Effects with CMOS Transistors”, IEEE Trans. Nucl. Sci., NS-32, 4369, (1985).
    • (1985) IEEE Trans. Nucl. Sci , vol.NS-32 , pp. 4369
    • Fleetwood, D.M.1
  • 10
    • 0024172671 scopus 로고
    • Time Dependent Interface Trap Effects in MOS Devices
    • H. E. Boesch, Jr., “Time Dependent Interface Trap Effects in MOS Devices”, IEEE Trans. Nucl. Sci., NS-35, 1160,(1988).
    • (1988) IEEE Trans. Nucl. Sci , vol.NS-35 , pp. 1160
    • Boesch, H.E.1
  • 11
    • 0023533304 scopus 로고
    • An Evaluation of Low-Energy X-ray and Cobalt-60 Irradiations of MOS Transistors
    • C. M. Dozier, et al., “An Evaluation of Low-Energy X-ray and Cobalt-60 Irradiations of MOS Transistors”, IEEE Trans. Nucl. Sci., NS-34, 1535, (1987).
    • (1987) IEEE Trans. Nucl. Sci , vol.NS-34 , pp. 1535
    • Dozier, C.M.1
  • 12
    • 0023365933 scopus 로고
    • Dose Enhancment Effects in a Shepherd Model 81 – 22 Cobalt-60 Irradiator
    • T. C. Zietlow, “Dose Enhancment Effects in a Shepherd Model 81–22 Cobalt-60 Irradiator”, IEEE Trans. Nucl. Sci., NS-34, 662, (1987).
    • (1987) IEEE Trans. Nucl. Sci , vol.NS-34 , pp. 662
    • Zietlow, T.C.1
  • 13
    • 84939056007 scopus 로고
    • Experimental Determination of the Low-Energy Spectral Component of Cobalt-60 Sources
    • K. G. Kerris and S. G. Gorbics, “Experimental Determination of the Low-Energy Spectral Component of Cobalt-60 Sources”, IEEE Trans. Nucl. Sci., NS-32, 4356, (1985).
    • (1985) IEEE Trans. Nucl. Sci , vol.NS-32 , pp. 4356
    • Kerris, K.G.1    Gorbics, S.G.2
  • 14
    • 0022247785 scopus 로고
    • Defect Production in SiO2 by X-ray and Cobalt-60 Radiations
    • C. M. Dozier, et al., “Defect Production in SiO2 by X-ray and Cobalt-60 Radiations”, IEEE Trans. Nucl. Sci., NS-32, 4363, (1985).
    • (1985) IEEE Trans. Nucl. Sci , vol.NS-32 , pp. 4363
    • Dozier, C.M.1
  • 15
    • 0007240288 scopus 로고
    • Growth and Annealing of Trapped Holes and Interface States Using Time-Dependent Biases
    • R. K. Freitag, C. M. Dozier, and D. B. Brown, “Growth and Annealing of Trapped Holes and Interface States Using Time-Dependent Biases”, IEEE Trans. Ncl. Sci., NS-34, 1172, (1987).
    • (1987) IEEE Trans. Ncl. Sci , vol.NS-34 , pp. 1172
    • Freitag, R.K.1    Dozier, C.M.2    Brown, D.B.3
  • 16
    • 0018517266 scopus 로고
    • Subthreshold Behavior of Uniformly and Nonuniformly Doped Long-Channel MOSFET
    • J. R. Brews, “Subthreshold Behavior of Uniformly and Nonuniformly Doped Long-Channel MOSFET”, IEEE Trans. Elec. Dev., ED-26, 1282, (1979).
    • (1979) IEEE Trans. Elec. Dev , vol.ED-26 , pp. 1282
    • Brews, J.R.1
  • 18
    • 0021605304 scopus 로고
    • Correlating the Radiation Response of MOS Capacitors and Transistors
    • P. S. Winokur, et al., “Correlating the Radiation Response of MOS Capacitors and Transistors”, IEEE Trans. Nucl. Sci., NS-31, 1453, (1984).
    • (1984) IEEE Trans. Nucl. Sci , vol.NS-31 , pp. 1453
    • Winokur, P.S.1
  • 19
    • 84939068374 scopus 로고
    • Generation of Interface States by Ionizing Radiation at 80K Measured by Charge Pumping and Subthreshold Slope Techniques
    • N. K. Saks and M. G. Acona, “Generation of Interface States by Ionizing Radiation at 80K Measured by Charge Pumping and Subthreshold Slope Techniques”, IEEE Trans. Nucl. Sci., NS-34, 1348, (1987).
    • (1987) IEEE Trans. Nucl. Sci , vol.NS-34 , pp. 1348
    • Saks, N.K.1    Acona, M.G.2
  • 20
    • 0041302432 scopus 로고
    • A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors
    • D. M. Fleetwood, P. V. Dressendorfer, and D. C. Turpin, “A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors”, IEEE Trans. Nucl. Sci., NS-34, 1178, (1987).
    • (1987) IEEE Trans. Nucl. Sci , vol.NS-34 , pp. 1178
    • Fleetwood, D.M.1    Dressendorfer, P.V.2    Turpin, D.C.3
  • 21
    • 0024908415 scopus 로고
    • Application of a Model for Treatment of Time Dependent Effects on Irradiation of Microelectronic Devices
    • (this issue)
    • D. B. Brown, W. C. Jenkins and A. H. Johnston, “Application of a Model for Treatment of Time Dependent Effects on Irradiation of Microelectronic Devices”, IEEE Trans. Nucl. Sci., NS-36, 1989 (this issue).
    • (1989) IEEE Trans. Nucl. Sci , vol.NS-36
    • Brown, D.B.1    Jenkins, W.C.2    Johnston, A.H.3
  • 22
    • 0024168776 scopus 로고
    • Using Laboratory X-ray and Cobalt-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments
    • D. M. Fleetwood, P. S. Winokur, and J. R. Schwank, “Using Laboratory X-ray and Cobalt-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments”, IEEE Trans. Nucl. Sci., NS-35, (1988).
    • (1988) IEEE Trans. Nucl. Sci , vol.NS-35
    • Fleetwood, D.M.1    Winokur, P.S.2    Schwank, J.R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.