Voltage-dependent membrane displacements measured by atomic force microscopy

Journal of General Physiology

Volumn 111, Issue 1, 1998, Pages 65-74

  Mosbacher, J ^a,d   Langer, M ^b   Horber J K H ^a   Sachs, F ^c  

^a EUROPEAN MOLECULAR BIOLOGY LABORATORY   (Germany)

^b UNIVERSITY OF TÜBINGEN   (Germany)

^c UNIVERSITY AT BUFFALO   (United States)

^d NOVARTIS PHARMA AG   (Switzerland)

Author keywords

Flexoelectric; Gating; K channels; Mechanical; Scanning microscopy

Indexed keywords

ION CHANNEL; POTASSIUM CHANNEL;

ARTICLE; ATOMIC FORCE MICROSCOPY; CONTROLLED STUDY; ELECTRIC POTENTIAL; EMBRYO; HUMAN; HUMAN CELL; MEMBRANE CHANNEL; MEMBRANE CONDUCTANCE; MEMBRANE DEPOLARIZATION; MEMBRANE ELECTROPHYSIOLOGY;

ARTIFACTS; CELL MEMBRANE; CELLS, CULTURED; CYTOSKELETON; ELECTRIC CONDUCTIVITY; HUMANS; ION CHANNEL GATING; KIDNEY; MEMBRANE POTENTIALS; MICROSCOPY, ATOMIC FORCE; PATCH-CLAMP TECHNIQUES; POTASSIUM CHANNELS; SHAKER SUPERFAMILY OF POTASSIUM CHANNELS; STRESS, MECHANICAL; TRANSFECTION;

EID: 0031931526     PISSN: 00221295     EISSN: None     Source Type: Journal    
DOI: 10.1085/jgp.111.1.65     Document Type: Article

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