Internal voltage generator for low voltage, quarter-micrometer flash memories

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 1, 1998, Pages 126-132

  Kawahara, Takayuki ^a,b,c,d,e   Saeki, Syun Ichi ^c,e,f   Jyouno, Yusuke ^c,g   Miyamoto, Naoki ^c,h   Kobayashi, Takashi ^c,i,j   Kimura, Katsutaka ^a,c,j,k  

^a IEEE   (Switzerland)

^b EPFL   (Switzerland)

^c HITACHI LTD   (Japan)

^d KYUSHU UNIVERSITY   (Japan)

^e Institute of Electronics   (Japan)

^f TOKAI UNIVERSITY   (Japan)

^g TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^h NIHON UNIVERSITY   (Japan)

ⁱ TOHOKU UNIVERSITY   (Japan)

^j JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^k KYOTO UNIVERSITY   (Japan)

more..

Author keywords

Bandgap generator; Dynamic operation; Flash memory; Triple well bipolar transistor; Voltage doubler

Indexed keywords

BIPOLAR TRANSISTORS; CAMERAS; DIGITAL IMAGE STORAGE; ELECTRIC CURRENTS; ELECTRIC GENERATORS; TEMPERATURE;

BANDGAP GENERATOR; FLASH MEMORY; VOLTAGE DOUBLER; VOLTAGE GENERATOR;

ELECTRIC POWER SUPPLIES TO APPARATUS;

EID: 0031702546     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.654944     Document Type: Article

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