98mm2 3.3V 64Mb flash memory with FN-NOR type 4-level cell

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 39, Issue , 1996, Pages 36-37

  Ohkawa, Masayoshi ^a   Sugawara, Hiroshi ^a   Sudo, Naoaki ^a   Tsukiji, Masaru ^a   Nakagawa, Ken ichiro ^a   Kawata, Masato ^a   Oyama, Ken ichi ^a   Takeshima, Toshio ^a   Ohya, Shuichi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR ARRAYS; CMOS INTEGRATED CIRCUITS; COMPARATOR CIRCUITS; COMPUTER PROGRAMMING; DIFFERENTIAL AMPLIFIERS; FLIP FLOP CIRCUITS; LOGIC CIRCUITS; LOGIC GATES; PARALLEL PROCESSING SYSTEMS; SIGNAL GENERATORS; TIMING CIRCUITS;

CIRCUIT DIAGRAM; DRAIN VOLTAGE CONTROLLED MULTILEVEL PROGRAMMING; FLASH MEMORY; MEMORY CELLS; NOR CIRCUITS; PARALLEL MULTILEVEL VERIFY;

DIGITAL STORAGE;

EID: 0030083353     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)