Electron-beam exposure characteristics of a novel Ru-PMMA composite resist

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 327-330

  Thomas, M D R ^a   Hasko, D G ^a   Ahmed, H ^a   Brown, D B ^b   Johnson, B F G ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; LITHOGRAPHY; NANOTECHNOLOGY; POLYMETHYL METHACRYLATES; RUTHENIUM;

METAL CLUSTERS ADDITION;

PHOTORESISTS;

EID: 0031702333     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00075-6     Document Type: Article

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4. S. Middleman and A.K. Hochberg, Process Engineering Analysis in Semiconductor Device Fabrication, (McGraw-Hill, New York, 1993) p. 301.
5. Z.W. Chen, G.A.C. Jones and H. Ahmed, J. Vac. Sci. B, 6, 2009 (1988).
6. D. Macintyre and S. Thorns, Microelect. Eng. 35, 213 (1997).