Photoluminescence from InAs quantum dots on GaAs(100)

Thin Solid Films

Volumn 312, Issue 1-2, 1998, Pages 287-290

  Cheng, Wen Qin ^a   Xie, Xiao Gang ^a   Zhong, Zhen Yang ^a   Cai, Li Hong ^a   Huang, Qi ^a   Zhou, Jun Ming ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

InAs deposition; Photocarrier transfer; Quantum dots

Indexed keywords

CHARGE CARRIERS; ENERGY GAP; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

FULL WIDTH AT HALF MAXIMUM (FWHM); PHOTOCARRIER TRANSFER;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031701619     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00730-X     Document Type: Article

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