Atomic layer epitaxy of GaAs and GaAs xP1-x on nominally oriented GaAs(111) substrates with high quality surface and interfaces

Journal of Crystal Growth

Volumn 160, Issue 1-2, 1996, Pages 21-26

  Lee, Jeong Sik ^a   Iwai, Sohachi ^a   Isshiki, Hideo ^a   Meguro, Takashi ^a   Sugano, Takuo ^a   Aoyagi, Yoshinobu ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MORPHOLOGY; MULTILAYERS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES;

ATOMIC LAYER EPITAXY; LAYER BY LAYER GROWTH; SURFACE MORPHOLOGIES; XRAY ROCKING CURVE;

SEMICONDUCTOR GROWTH;

EID: 0030110279     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00907-8     Document Type: Article

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