Near-ultraviolet light-emitting diodes based on σ-conjugated linear silicon-backbone polymers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 1, 1998, Pages 129-142

  Suzuki, Hiroyuki ^a   Hoshino, Satoshi ^a   Yuan, Chien Hua ^a   Fujiki, Michiya ^a   Toyoda, Seiji ^a,b   Matsumoto, Nobuo ^a   Pal, Amlan J ^c,d,e,f,g   Östergård, Toni P ^g  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

^c UNIVERSITY OF CALCUTTA   (India)

^d JADAVPUR UNIVERSITY   (India)

^e CNR   (Italy)

^f DEPARTMENT OF MATERIALS SCIENCE   (India)

^g ÅBO AKADEMI UNIVERSITY   (Finland)

Author keywords

Electroluminescence; Polymer lightemitting diodes; Polysilanes; UV light source

Indexed keywords

ALUMINUM; BANDWIDTH; ELECTROLUMINESCENCE; FABRICATION; INDIUM COMPOUNDS; OPTIMIZATION; ORGANIC POLYMERS; POLYSILANES; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

INDIUM TIN OXIDE; NEAR ULTRAVIOLET LIGHT EMITTING DIODE; POLYBISBUTYLPHENYL SILANE; POLYDIBUTYL SILANE; POLYDIHEXY SILANE; POLYMER LIGHT EMITTING DIODE; POLYMETHYLPHENYL SILANE;

LIGHT EMITTING DIODES;

EID: 0031676822     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.669486     Document Type: Article

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