1.55 μm InGaAsP/InP phase-locked diode laser arrays of high coherent power

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 673-675

  Bhattacharya, A ^a   Mawst, L J ^a   Botez, D ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; HIGH POWER LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

BEAMWIDTH; CENTRAL LOBES;

SEMICONDUCTOR LASERS;

EID: 0030647610     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)