Low-threshold laterally oxidized GaInP-AlGaInP quantum-well laser diodes

IEEE Photonics Technology Letters

Volumn 10, Issue 1, 1998, Pages 45-47

  Floyd, P D ^a,b   Sun, D ^a,b   Treat, D W ^b  

^a IEEE   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

AlGaInP; Annealing; Lasers; Lateral oxidation; Native oxide; Quantum well lasers; Semiconductor lasers

Indexed keywords

ANNEALING; CURRENT DENSITY; OXIDATION; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

CONTINUOUS WAVE (CW) THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 0031673142     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.651097     Document Type: Article

References (10)

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