Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 183, Issue 1-2, 1998, Pages 31-37

  Li, X B ^a   Sun, D Z ^a   Kong, M Y ^a   Yoon, S F ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; ELECTRON BEAMS; FILM GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NUCLEATION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0031672708     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00402-8     Document Type: Article

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