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Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 289-293

Deep level formation and heterojunction band offsets at ZnSe/GaAs interfaces

(6) Brillson, L J a Yang, X b Raisanen, A D b Franciosi, A c,d Vanzetti, L c,d Sorba, L c,d

a OHIO STATE UNIVERSITY (United States)

b XEROX CORPORATION (United States)

c LABORATORIO TASC (Italy)

d University of Minnesota (United States)

Author keywords

Band offsets; Deep levels; Photoluminescence spectroscopy; ZnSe GaAs heterojunctions

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; CRYSTAL DEFECTS; INTERDIFFUSION (SOLIDS); PHOTOEMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; STOICHIOMETRY;

NEAR BAND EDGE (NBE) RECOMBINATION; PHOTOLUMINESCENCE SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0031655664 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00452-2 Document Type: Article

Times cited : (5)

References (11)

1
- 0000870679
- P.T. Landsberg (Ed.), North-Holland. Amsterdam
- L.J. Brillson, in: P.T. Landsberg (Ed.), Handbook on Semiconductors, vol. 1, North-Holland. Amsterdam, 1992, p. 281.
- (1992) Handbook on Semiconductors , vol.1 , pp. 281
- Brillson, L.J.¹

2
- 57349188317
- A. Franciosi, C. Van de Walle, Surf. Sci. Rep. 214 (1996) 1.
- (1996) Surf. Sci. Rep. , vol.214 , pp. 1
- Franciosi, A.¹ Van De Walle, C.²

3
- 0345683336
- R. Nicolini, L. Vanzetti, G. Bratina, L. Sorba, A. Franciosi, Phys. Rev. Lett. 72 (1994) 294.
- (1994) Phys. Rev. Lett. , vol.72 , pp. 294
- Nicolini, R.¹ Vanzetti, L.² Bratina, G.³ Sorba, L.⁴ Franciosi, A.⁵

4
- 0029270977
- A. Raisanen, L.J. Brillson, A. Franciosi, R. Nicolini, L. Vanzetti, L. Sorba, J. Electron. Mater. 24 (1995) 163.
- (1995) J. Electron. Mater. , vol.24 , pp. 163
- Raisanen, A.¹ Brillson, L.J.² Franciosi, A.³ Nicolini, R.⁴ Vanzetti, L.⁵ Sorba, L.⁶

5
- 0029310140
- A. Raisanen, L.J. Brillson, L. Vanzetti, L. Sorba, A. Franciosi, J. Vac. Sci. Technol. 13 (1995) 690.
- (1995) J. Vac. Sci. Technol. , vol.13 , pp. 690
- Raisanen, A.¹ Brillson, L.J.² Vanzetti, L.³ Sorba, L.⁴ Franciosi, A.⁵

6
- 36449000318
- A.D. Raisanen, L.J. Brillson, L. Vanzetti, A. Bonanni, A. Franciosi, Appl. Phys. Lett. 66 (1995) 3301.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 3301
- Raisanen, A.D.¹ Brillson, L.J.² Vanzetti, L.³ Bonanni, A.⁴ Franciosi, A.⁵

7
- 0017630804
- M. Yamaguchi, A. Yamamoto, M. Kondo, J. Appl. Phys. 48 (1977) 5237.
- (1977) J. Appl. Phys. , vol.48 , pp. 5237
- Yamaguchi, M.¹ Yamamoto, A.² Kondo, M.³

8
- 0004390774
- X. Yang, L.J. Brillson, A.D. Raisanen, L. Vanzetti, A. Bonanni, A. Franciosi, J. Vac. Sci. Technol. 14 (1996) 867.
- (1996) J. Vac. Sci. Technol. , vol.14 , pp. 867
- Yang, X.¹ Brillson, L.J.² Raisanen, A.D.³ Vanzetti, L.⁴ Bonanni, A.⁵ Franciosi, A.⁶

9
- 0004363852
- X. Yang, L.J. Brillson, A.D. Raisanen, L. Vanzetti, A. Bonanni, A. Franciosi, M. Grundmann, D. Bimberg, J. Vac. Sci. Technol. 14 (1996) 2961.
- (1996) J. Vac. Sci. Technol. , vol.14 , pp. 2961
- Yang, X.¹ Brillson, L.J.² Raisanen, A.D.³ Vanzetti, L.⁴ Bonanni, A.⁵ Franciosi, A.⁶ Grundmann, M.⁷ Bimberg, D.⁸

10
- 0026220951
- L. Kassel, J.W. Garland, P.M. Raccah, M.A. Haase, H. Cheng, Semicond. Sci. Techol. 6 (1991) A146.
- (1991) Semicond. Sci. Techol. , vol.6
- Kassel, L.¹ Garland, J.W.² Raccah, P.M.³ Haase, M.A.⁴ Cheng, H.⁵

11
- 0039023995
- D.T.R. Zahn, A. Drost, M. Kolodziejczyk, W. Richter, J. Vac. Sci. Technol. B 10 (1992) 2077.
- (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 2077
- Zahn, D.T.R.¹ Drost, A.² Kolodziejczyk, M.³ Richter, W.⁴

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