Internal photoinjection and deep level luminescence at ZnSe/GaAs heterointerfaces

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 3, 1996, Pages 867-871

  Yang, X ^a   Brillson, L J ^a   Raisanen, A D ^a   Vanzetti, L ^b,c,d   Bonanni, A ^b,c   Franciosi, A ^b,c,e  

^a XEROX CORPORATION   (United States)

^b INFM   (Italy)

^c University of Minnesota   (United States)

^d Centro Materiali Biofisica Medica   (Italy)

^e UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004390774     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580405     Document Type: Article

References (20)

1. Heterojunction Band Discontinuities, edited by F. Capasso and G. Margaritondo (North-Holland, Amsterdam, 1987).
2. L. J. Brillson, in Handbook on Semiconductors, edited by P. T. Landsberg (North-Holland, Amsterdam, 1992), Vol. 1, p. 281.
3. A. Franciosi and C. G. Van de Walle, Surf. Sci. Rep. (in press).
4. A. Raisanen, L. J. Brillson, R. S. Goldman, K. L. Kavanagh, and H. H. Wieder, Appl. Phys. Lett. 64, 3572 (1994).
5. A. Raisanen, L. J. Brillson, A. Franciosi, R. Nicolini, L. Vanzetti, and L. Sorba, J. Electron. Mater. 24, 163 (1995).
6. A. Raisanen, L. J. Brillson, L. Vanzetti, L. Sorba, and A. Franciosi, J. Vac. Sci. Technol. A 13, 690 (1995).
7. A. Raisanen, L. J. Brillson, L. Vanzetti, A. Bonanni, and A. Franciosi, J. Vac. Sci. Technol. B 13, 1705 (1995).
8. A. Raisanen, L. J. Brillson, L. Vanzetti, A. Bonanni, and A. Franciosi, Appl. Phys. Lett. 66, 3301 (1995).
9. J. McKinley and G. Margaritondo, in Contacts to Semiconductors, edited by L. J. Brillson (Noyes, Park Ridge, NJ, 1993), p. 600.
10. R. Nicolini, L. Vanzetti, G. Bratina, L. Sorba, and A. Franciosi, Phys. Rev. Lett. 72, 294 (1994).
11. L. Vanzetti, A. Bonanni, G. Bratina, L. Sorba, A. Franciosi, M. Lomascolo, D. Greco, and R. Cingolani. J. Cryst. Growth 150, 765 (1995).
12. A. Bonanni, L. Vanzetti, L. Sorba, A. Franciosi, M. Lomascolo, P. Prete, and R. Cingolani, Appl. Phys. Lett. 66, 1092 (1995).
13. R. Nicolini, L. Vanzetti, G. Mula, G. Bratina, L. Soiba, A. Mura, J. E. Angelo, W. W. Gerberich, and A. Franciosi, Mater. Res. Soc. Symp. Proc. 326, 3 (1994).
14. A. Franciosi, L. Vanzetti, A. Bonanni, L. Sorba, G. Bratina, and G. Biasol, in II-VI Blue/Green Laser Diodes, edited by R. L. Gunshor and A. V. Nurmikko [Proc. SPIE 2346, 100 (1994)].
15. M. C. Tamargo, J. L. de Miguel, D. M. Hwang, and H. H. Farrell, J. Vac. Sci. Technol. B 6, 784 (1988).
16. We also acquired spectra with a cooled North Coast Ge photodiode that complement the data presented here at lower energies. They are consistent with previous results in Refs. 6 and 7. The major difference between the S-1 photomultiplier and the Ge photodiode is the sensitivity range. The S-1 photomultiplier is sensitive in the range from 1 to 4 eV, and the Ge photodiode is sensitive in the range from 0.7 to ∼2.0 eV.
17. Spectra in Refs. 6 and 7 were obtained using a Ge photodiode with a narrower range of spectral sensitivity, heavily weighted toward the near infrared.
18. M. Cardona and G. Harbeke, J. Appl. Phys. 34, 813 (1963).
19. J. Baillou, J. Daunay, P. Bugnet, Jac. Daunay, C. Auzary, and R. Poindessault, J. Phys. Chem. Solids 41, 295 (1980).
20. X. Yang, L. J. Brillson, A. D. Raisanen, L. Vanzetti, A. Bonanni, and A. Franciosi (unpublished).