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Journal of Crystal Growth

Volumn 162, Issue 3-4, 1996, Pages 121-125

Growth of AlPSb and GaPSb on InP by gas-source molecular beam epitaxy

(3) Shimomura, Hirofumi a Anan, Takayoshi a Sugou, Shigeo a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL LATTICES; ELECTRIC PROPERTIES; ELECTRONS; ELLIPSOMETRY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACES;

ELECTRON CONCENTRATION; GAS SOURCE MOLECULAR BEAM EPITAXY; HALL MEASUREMENTS;

EPITAXIAL GROWTH;

EID: 0030149591 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00950-7 Document Type: Article

Times cited : (24)

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