Novel gate dielectric films formed by ion plating for low-temperature-processed polysilicon TFT's

IEEE Electron Device Letters

Volumn 17, Issue 9, 1996, Pages 421-424

  Yeh, Ching Fa ^a   Chen, Tai Ju ^a   Fan, Ching Lin ^a   Kao, Jiann Shiun ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b National Science Council   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATES (TRANSISTOR); ION BOMBARDMENT; MOSFET DEVICES; PLATING; REFRACTIVE INDEX; SILICA; THICKNESS MEASUREMENT; THIN FILM TRANSISTORS;

CAPACITANCE VOLTAGE CHARACTERISTICS; ETCHING RATE; GATE DIELECTRIC FILMS; GATE INSULATOR; ION PLATING; POLYSILICON THIN FILM TRANSISTORS;

DIELECTRIC FILMS;

EID: 0030243131     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.536280     Document Type: Article

References (19)

1. H. Ohshima, and S. Morozumi, "Future trends for TFT integrated circuits on glass substrates," in IEDM Tech. Dig., 1989, pp. 157-160.
2. A. C. Adams, "Plasma deposition of inorganic film," Solid State Technol., vol. 26, no. 4, pp. 135-139, 1983.
3. W. A. Pliskin, "Comparison of properties of dielectric films deposited by various methods," J. Vac. Sci. Technol., vol. 14, no. 5, pp. 1064-1081, 1977.
4. H. K. Pulker, E. Moll, W. Haag, and M. Buhler, "Properties of ion plated oxide films," J. Vac. Sci. Technol. A. vol. 3, no. 6, pp. 2700-2701, 1985.
5. H. K. Pulker, "Ion plating as an industrial manufacturing method," J. Vac. Sci. Technol. A, vol. 10, no. 4, pp. 1669-1674, 1992.
6. K. H. Guenther, B. Loo, D. Burns, J. Edgell, D. Windham, and K.-H. Muller, "Microstruclure analysis of thin-films deposited by reactive evaporation and by reactive ion plating," J. Vac. Sci. Technol. A. vol. 7, no. 3, pp. 1436-1445, 1989.
7. W. A. Pliskin and H. S. Lehman, "Structural evaluation of silicon oxide films," J. Electrochem. Soc., vol. 112, no. 10, pp. 1013-1019, 1965.
8. E. Kobeda, M. Kellam, and C. M. Osburn, "Rapid thermal annealing of low-temperature chemical vapor-deposited oxides," J. Electrochem. Soc., vol. 138, no. 6, pp. 1846-1849, 1991.
9. P. N. Sen, and M. F. Thorpe, "Phinons in AX2 glasses: from molecular to band-like modes," Phys. Rev. B, vol. 15, no. 8, pp. 4030-4038, 1977.
10. J. T. Fitch and G. Lucovsky, "Local atomic structure of thermally grown and rapid thermally annealed silicon dioxide layers," in Deposition and Growth: Limits for Microelectronics No. 167, G. W. Rubloff, Ed. Anaheim, CA: American Institute of Physics, 1987, pp. 124-132.
11. M. A. Machonkin and F. Jansen, "The effects of bond strain on the properties of plasma-deposited silicon-oxide films," Thin Solid Films, vol. 150, no. 2-3, p. L. 97, 1987.
12. T. A. Michalske and B. C. Bunker,"Slow fracture model based on strained silicate structures," J. Appl. Phys., vol. 56, no. 10, pp. 2686-2693, 1984.
13. 2-films grown at different temperatures," IEEE Electron Device Lett., vol. 15, no. 11, pp. 449-451, 1994.
14. 2," J. Appl. Phys., vol. 48, no. 9, pp. 3843-3849, 1977.
15. 2 films and experimental applications," J. Appl. Phys., vol. 51, no. 5, pp. 2722-2735, 1980.
16. B. Maiti and J. C. Lee, "Low-pressure chemical-vapor-deposited silicon-rich oxides for nonvolatile memory applications," IEEE Electron Device Lett., vol. 13, no. 12, pp. 624-626, 1992.
17. K.-T. Chang, "Growth and characterization of silicon-rich oxide for nonvolatile memories," Ph.D. dissertation, Rensselaer Polytechnic Inst., Troy, NY, 1987.
18. F. Okumura, K. Sera, H. Asada, S. Kaneko, H. Ichinose, S. Naemura, K. Tanaka, T. Yokoi, and C. Tani, "Ferroelectric liquid-crystal shutter array with poly-Si TET driver," IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1900-1904, 1989.
19. C. A. Dimitriadis, P. A. Coxon, L. Dozsa, L. Papedimitriou, and N. Economou, "Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor-deposition at various pressure," IEEE Trans. Electron Devices, vol. 39, no. 3, pp. 598-606, 1992.