Electrically active defects in n-type 4H- and 6H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 565-568

  Doyle, J P ^a,b   Aboelfotoh, M O ^a,c   Svensson, B G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c North Carolina State University   (United States)

Author keywords

Annealing; Defects; DLTS; Irradiation; Kinetics; SIMS

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISSOCIATION; ENERGY GAP; REACTION KINETICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS;

ISOCHRONAL ANNEALING; ISOTHERMAL ANNEALING;

SILICON CARBIDE;

EID: 0031648298     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.565     Document Type: Article

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