-
1
-
-
0030647319
-
SiGe bipolar junction transistors for microwave power applications
-
Denver, CO, June 9-15
-
G. N. Henderson, M. F. O'Keefe, T. E. Boles, P. Noonan, J. M. Sledziewski, and B. M. Brown, "SiGe bipolar junction transistors for microwave power applications," in IEEE MTT-S Int. Microwave Dig., Denver, CO, pp. 1299-1302, June 9-15, 1997.
-
(1997)
IEEE MTT-S Int. Microwave Dig.
, pp. 1299-1302
-
-
Henderson, G.N.1
O'Keefe, M.F.2
Boles, T.E.3
Noonan, P.4
Sledziewski, J.M.5
Brown, B.M.6
-
2
-
-
0022892197
-
High-efficiency 1-, 2-, and 4-W class-B FET power amplifiers
-
Dec.
-
J. R. Lane, R. G. Freitag, H.-K. Hahn, J. E. Degenford, and M. Cohn, "High-efficiency 1-, 2-, and 4-W class-B FET power amplifiers," IEEE Trans. Microwave Theory Tech., vol. 34, pp. 1318-1325, Dec. 1986.
-
(1986)
IEEE Trans. Microwave Theory Tech.
, vol.34
, pp. 1318-1325
-
-
Lane, J.R.1
Freitag, R.G.2
Hahn, H.-K.3
Degenford, J.E.4
Cohn, M.5
-
3
-
-
0029520038
-
High-efficiency amplifiers for portable handsets
-
Toronto, Canada, Sept. 27-29
-
T. Mader, M. Markovic, Z. B. Popovic, and R. Tayrani, "High-efficiency amplifiers for portable handsets," in Sixth IEEE Int. Symp. on Personal, Indoor, and Mobile Radio Commun., Toronto, Canada, Sept. 27-29, 1995, vol. 3, pp. 1242-1245.
-
(1995)
Sixth IEEE Int. Symp. on Personal, Indoor, and Mobile Radio Commun.
, vol.3
, pp. 1242-1245
-
-
Mader, T.1
Markovic, M.2
Popovic, Z.B.3
Tayrani, R.4
-
4
-
-
0030655239
-
Class F power amplifier integrated with circular sector microstrip antenna
-
Denver, CO, June 9-15
-
V. Radisic, Y. Qian, and T. Itoh, "Class F power amplifier integrated with circular sector microstrip antenna," in IEEE MTT-S Int. Microwave Dig., Denver, CO, pp. 687-690, June 9-15, 1997.
-
(1997)
IEEE MTT-S Int. Microwave Dig.
, pp. 687-690
-
-
Radisic, V.1
Qian, Y.2
Itoh, T.3
-
5
-
-
0027641763
-
High-efficiency class F GaAs FET amplifier operating with very low bias voltage for use in mobile telephones at 1.75 GHz
-
Aug.
-
C. Duvanaud, S. Dietsche, G. Pataut, and J. Obregon, "High-efficiency class F GaAs FET amplifier operating with very low bias voltage for use in mobile telephones at 1.75 GHz," IEEE Microwave Guided Wave Lett., vol. 3, pp. 268-270, Aug. 1993.
-
(1993)
IEEE Microwave Guided Wave Lett.
, vol.3
, pp. 268-270
-
-
Duvanaud, C.1
Dietsche, S.2
Pataut, G.3
Obregon, J.4
-
7
-
-
0031078184
-
High efficiency power amplifier integrated with antenna
-
Feb.
-
V. Radisic, S. T. Chew, Y. Qian, and T. Itoh, "High efficiency power amplifier integrated with antenna," IEEE Microwave Guided Wave Lett., vol. 7, pp. 39-41, Feb. 1997.
-
(1997)
IEEE Microwave Guided Wave Lett.
, vol.7
, pp. 39-41
-
-
Radisic, V.1
Chew, S.T.2
Qian, Y.3
Itoh, T.4
-
9
-
-
0031356939
-
Simulation and experiment of photonic band-gap structures for microstrip circuits
-
accepted for presentation Hong Kong, Dec.
-
Y. Qian, V. Radisic, and T. Itoh, "Simulation and experiment of photonic band-gap structures for microstrip circuits," accepted for presentation at APMC'97, Hong Kong, Dec. 1997.
-
(1997)
APMC'97
-
-
Qian, Y.1
Radisic, V.2
Itoh, T.3
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