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Volumn 7, Issue 2, 1997, Pages 39-41

High-efficiency power amplifier integrated with antenna

Author keywords

Active antenna; Class B; FET; Power amplifier

Indexed keywords

ANTENNAS; COMPUTER SIMULATION; ELECTRIC IMPEDANCE; ELECTRONIC EQUIPMENT MANUFACTURE; FIELD EFFECT TRANSISTORS; FINITE DIFFERENCE METHOD; SEMICONDUCTING GALLIUM ARSENIDE; TIME DOMAIN ANALYSIS;

EID: 0031078184     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.553052     Document Type: Article
Times cited : (72)

References (6)
  • 2
    • 0027641763 scopus 로고
    • High-efficiency class F GaAs FET amplifier operating with very low bias voltage for use in mobile telephones at 1.75 GHz
    • Aug.
    • C. Duvanaud, S. Dietsche, G. Pataut, and J. Obregon, "High-efficiency class F GaAs FET amplifier operating with very low bias voltage for use in mobile telephones at 1.75 GHz," IEEE Microwave Guided Wave Lett., vol. 3, pp. 268-270, Aug. 1993.
    • (1993) IEEE Microwave Guided Wave Lett. , vol.3 , pp. 268-270
    • Duvanaud, C.1    Dietsche, S.2    Pataut, G.3    Obregon, J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.