New resonant tunneling diode with a deep quantum-well

Japanese Journal of Applied Physics

Volumn 25, Issue 9, 1986, Pages L786-L788

  Toyoshima, Hideo ^a   Ando, Yuji ^a   Okamoto, Akihiko ^a   Itoh, Tomohiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS - APPLICATIONS;

DEEP QUANTUM WELLS; INDIUM GALLIUM ARSENIDE; RESONANT TUNNELING DIODE;

SEMICONDUCTOR DIODES;

EID: 0022775885     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.25.L786     Document Type: Article

References (9)

1. L. L. Chang, L. Esaki and R. Tsu: Appl. Phys. Lett. 24 (1974) 593
2. T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker and D. D. Peck: Appl. Phys. Lett. 43 (1983) 588
3. M. Tsuchiya and H. Sakaki: Jpn. J. Appl. Phys. 25 (1986) L185
4. E. R. Brown, T. C. L. G. Sollner, W. D. Goodhue, B. J. Clifton and P. E. Tannenwald: 44th Device Research Conference (1986) VIB-1
5. N. Yokoyama, K. Imamura, S. Muto, S. Hiyamizu and H. Nishi: Jpn. J. Appl. Phys. 24 (1985) L853
6. A. R. Bonnefoi, D. H. Chow and T. C. McGill: Appl. Phys. Lett. 47 (1985) 888
7. A. R. Bonnefoi, T. C. McGill and R. D. Burnham: IEEE Electron Device Lett. EDL-6 (1985) 636
8. J. J. Rosenberg, M. Benlawri, P. D. Kirchner, J. M. Woodwall and G. D. Pettit: IEEE Electron Devices Lett. EDL-6 (1985) 491
9. W. T. Masselink, A. Ketterson, J. Klem, W. Kopp and H. Morkoç: Electron. Lett. 21 (1985) 937