Quantum-well resonant tunneling bipolar transistor operating at room temperature

IEEE Electron Device Letters

Volumn 7, Issue 10, 1986, Pages 573-576

  Capasso, Federico ^a   Gossard, Arthur C ^a   Hutchinson, Albert L ^a   English, John H ^a   Sen, Susanta ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS;

ALUMINUM GALLIUM ARSENIDE; QUANTUM-WELL DEVICES; RESONANT-TUNNELING BIPOLAR TRANSISTOR;

TRANSISTORS, BIPOLAR;

EID: 0022791620     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1986.26478     Document Type: Article

References (11)

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2. F. Capasso and R. A. Kiehl, “Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance device,” J. Appl. Phys., vol. 58, pp. 1366–1368, 1985.
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6. Y. Nakata, M. Asada, and Y. Suematsu, “Novel triode device using metal insulator superlattice proposed for high speed response,” Electron. Lett., vol. 22, pp. 58–59, 1986.
7. P. M. Asbeck, “Heterojunction bipolar transistor technology for high speed integrated circuits,” in Picosecond Electronics and Optoelectronics, G. A. Mourou, D. M. Bloom, and C. H. Lee, Eds. Berlin: Springer, 1985, pp. 32–37.
8. R. J. Malik, F. Capasso, R. A. Stall, R. A. Kiehl, R. W. Ryan, R. Wunder, and C. G. Bethea, “High gain, high frequency AlGaAs/GaAs graded band-gap base bipolar transistors with a Be diffusion setback layer in the base,” Appl. Phys. Lett., vol. 46, pp. 600–603, 1985.
9. M. Tsuchiya, H. Sakaki, and J. Yoshino, “Room temperature observation of differential negative resistance in A1As/GaAs/AlAs resonant tunneling diode,” Japan J. Appl. Phys., part 2, vol. 24, pp. L466-L468, 1985.
10. F. Capasso, K. Mohammed, and A. Y. Cho, “Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices and their device applications,” IEEE J. Quantum Electron., vol. QE-22, pp. 1853–1869, Sept. 1986.
11. D. Ankri, R. A. Zoulay, E. Caquot, J. Dangla, C. Dubon, and J. Palmier, “Analysis of d.c. characteristics of GaAlAs/GaAs double heterojunction bipolar transistors,” Solid-State Electron., vol. 29, pp. 141–149, 1986.