Optical gain of interdiffused InGaAs-GaAs and AlGaAs-GaAs quantum wells

IEEE Journal of Quantum Electronics

Volumn 34, Issue 1, 1998, Pages 157-165

  Chan, K S ^a,b   Li, E Herbert ^a,c   Chan, Michael C Y ^c  

^a IEEE   (Hong Kong)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Diffusion processes; Quantum heterostructures; Quantum well devices; Quantum well interdiffusion; Quantum well lasers

Indexed keywords

CURRENT DENSITY; INTERDIFFUSION (SOLIDS); MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

HOLE SUBBAND STRUCTURES; QUANTUM HETEROSTRUCTURES; QUANTUM WELL INTERDIFFUSION;

QUANTUM WELL LASERS;

EID: 0031646407     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.655019     Document Type: Article

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