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Volumn 46, Issue 23, 1992, Pages 15181-15192

Effect of interdiffusion on the subbands in an AlxGa1-xAs/GaAs single-quantum-well structure

Author keywords

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Indexed keywords


EID: 0004662694     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.46.15181     Document Type: Article
Times cited : (65)

References (51)
  • 3
    • 84931483680 scopus 로고    scopus 로고
    • It should be noted that in the literature the QW material modified by thermal interdiffusion with or without the introduction of intensional impurities is synonymously termed as ``mixing'' and ``disordering.''
  • 24
    • 84931483678 scopus 로고    scopus 로고
    • It should be noted here that the definition of Ld varies in the literature; for instance, some authors define Ld as 2(Dt)1/2; see Ref. 11.
  • 25
    • 84931483676 scopus 로고    scopus 로고
    • J. Crank, The Mathematics of Diffusion, 2nd ed. (Oxford University, Oxford, 1975), p. 15.
  • 34
    • 84931483669 scopus 로고    scopus 로고
    • This is to consider the p vec operator in the z direction and its atomic orbitals are replaced by the k vecpara=0 envelope function.
  • 35
    • 84931483665 scopus 로고    scopus 로고
    • This fact is demonstrated by an analytical expression with a similar nonlinear profile in E. H. Li and B. L. Weiss, IEEE J. Quantum Electron. (to be published).
  • 48
    • 84931483667 scopus 로고    scopus 로고
    • E. S. Koteles, Advanced III-V Compound Semiconductor Growth, Processing and Devices, edited by S. J. Pearton, D. K. Sadana, and J. M. Zavada, MRS Symposia Proceedings No. 204 (Material Research Society, Pittsburgh, 1992), p. 99.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.