Gate oxide leakage due to temperature accelerated degradation under plasma charging conditions

Microelectronics Reliability

Volumn 38, Issue 1, 1998, Pages 73-79

  Brozek, Tomasz ^a,c,d   Chan, Y David ^b,e   Viswanathan, Chand R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SEMATECH   (United States)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d MOTOROLA INC   (United States)

^e Rockwell International   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMAL EFFECTS;

GATE OXIDE LEAKAGE; PLASMA CHARGING; TEMPERATURE ACCELERATED DEGRADATION;

MOSFET DEVICES;

EID: 0031645521     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00076-0     Document Type: Article

References (19)

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