Composition and reconstruction of the GaP{100}-(4 × 2) surface

Surface Science

Volumn 365, Issue 1, 1996, Pages 136-148

  Sung, M M ^a   Rabalais, J W ^a  

^a University of Houston   (United States)

Author keywords

Computer simulations; Gallium phosphide; Ion solid interactions, scattering, channeling; Low energy ion scattering (LEIS); Low index single crystal surfaces; Semiconducting films; Surface relaxation and reconstruction

Indexed keywords

CHEMICAL BONDS; COMPOSITION; COMPUTER SIMULATION; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROMETRY; SURFACE ROUGHNESS; SURFACE TREATMENT;

GALLIUM PHOSPHIDE; ION SOLID INTERACTIONS; LOW ENERGY ION SCATTERING; MISSING ROW DIMER MODEL; SURFACE TOPOGRAPHY; TIME OF FLIGHT AND RECOILING SPECTROMETRY;

SURFACES;

EID: 0030242875     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00680-2     Document Type: Article

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