A clean GaP(001)4×2/c(8×2) surface structure studied by scanning tunneling microscopy and ion scattering spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 9 A, 1996, Pages 4789-4790

  Naitoh, Masamichi ^a   Watanabe, Akihiko ^a   Konishi, Akira ^a   Nishigaki, Satoshi ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaP(001); ISS; STM; Surface reconstruction; Surface structure

Indexed keywords

SEMICONDUCTOR WAFERS;

ION BOMBARDMENT; MICROSCOPIC EXAMINATION; RADIATION EFFECTS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE STRUCTURE;

SEMICONDUCTOR MATERIALS;

EID: 0030232261     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4789     Document Type: Article

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