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Volumn , Issue , 1998, Pages 291-296

Layout extraction and verification methodology for CMOS I/O circuits

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC RECTIFIERS; ELECTROSTATIC DEVICES; EXTRACTION; MOS DEVICES; TIMING CIRCUITS; BIPOLAR TRANSISTORS; ELECTRIC DISCHARGES; ELECTROSTATICS; INTEGRATED CIRCUIT LAYOUT; MICROPROCESSOR CHIPS; VLSI CIRCUITS;

EID: 0031642075     PISSN: 0738100X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (12)

References (16)
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  • 2
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    • Diaz, C.1    Kang, S.M.2    Duvvury, C.3
  • 3
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    • Lauther, U.1
  • 4
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    • Time-efficient VLSI artwork algorithms in GOALIE2
    • June
    • K. Chang, S. Nahar and C. Lo, "Time-Efficient VLSI Artwork Algorithms in GOALIE2, " IEEE Trans, on CAD, vol. 8, no. 6, June 1989.
    • (1989) IEEE Trans, on CAD , vol.8 , Issue.6
    • Chang, K.1    Nahar, S.2    Lo, C.3
  • 5
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    • Barke, E.1
  • 6
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    • A low-voltage triggering SCR for On-Chip ESD protection at output and input pads
    • A. Chatterjee and T. Polgreen, "A Low-Voltage Triggering SCR for On-Chip ESD Protection at Output and Input Pads, " IEEE Electron Device Letters, vol. 12, no. 1, pp. 21-22, 1991.
    • (1991) IEEE Electron Device Letters , vol.12 , Issue.1 , pp. 21-22
    • Chatterjee, A.1    Polgreen, T.2
  • 9
    • 0029721803 scopus 로고    scopus 로고
    • Modeling MOS snapback and parasitic bipolar action for circuit-level ESD ana high current simulations
    • A. Amerasekeraj S. Ramaswamy, M. Chang and C. Duvvury, "Modeling MOS Snapback and Parasitic Bipolar Action for Circuit-Level ESD ana High Current Simulations, " International Reliability Physics Symp., pp. 318-326, 1996.
    • (1996) International Reliability Physics Symp. , pp. 318-326
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  • 10
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  • 11
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  • 12
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  • 13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.