High performance 1.55μm polarisation-insensitive semiconductor optical amplifier based on low-tensile-strained bulk GaInAsP

Electronics Letters

Volumn 33, Issue 12, 1997, Pages 1083-1084

  Emery, J Y ^a   Ducellier, T ^a   Bachmann, M ^a   Doussiere P ^a   Pommereau, F ^a   Ngo, R ^a   Gaborit, F ^a   Goldstein, L ^a   Laube, G ^a   Barrau, J ^b  

^a NOKIA RESEARCH CENTER   (United States)

^b CNRS   (France)

Author keywords

Fibre amplifiers; Semiconductor junction lasers

Indexed keywords

FIBER LASERS; HETEROJUNCTIONS; LIGHT POLARIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; TENSILE STRENGTH;

CORE TAPER; TRANSVERSE ELECTRIC (TE) POLARIZATION; TRANSVERSE MAGNETIC (TM) POLARIZATION;

SEMICONDUCTOR LASERS;

EID: 0031554412     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970703     Document Type: Article

References (9)

1. TIEMEIJER, L.F., THUS, P.J.A., VAN DONGEN, T., SLOOTWEG, R.W.M., VAN DER HEIJDEN, J.M.M., BINSMA, J.J.M., and KRIJN, M.P.C.M.: 'Polarization insensitive multiple quantum well laser amplifiers for the 1300nm window', Appl. Phys. Lett., 1993, 62, (8), pp. 826-828
2. NEWKIRK, M.A., MILLER, B.I., KOREN, U., YOUNG, M.G., CHIEN, M., JOPSON, R.M., and BURRUS, C.A.: '1.5μm multiple quantum well semiconductor amplifier with tensile and compressivestrained wells for polarisation independant gain', IEEE Photonics Technol. Lett., 1993, 5, (4), pp, 406-408
3. MAGARI, K., OKAMOTO, M., SUZUKI, Y., SATO. K., NOGUCHI, Y., and MIKAMI, O.: 'Polarization-insensitive optical amplifier with tensile strained barrier MQW structure', IEEE J. Quantum Electron., 1994, 30, (3), pp. 695-701
4. GODEFROY, A., LECORRE, A., CLÉROT, F., SALAÜN, S., LOUALICHE, S., SIMON, J.C., HENRY, L., VAUDRY, C., KÉROMNÉS, J.C., JOULIÉ, G., and LAMOULER, P.: '1.55μm polarization insensitive optical amplifier with strain-balanced superlattice active layer', IEEE Photonics Technol Lett., 1995, 7, (5), pp. 473-475
5. SIGOGNE, D., OUGAZZADEN, A., MEICHENIN, D., MERSALI, B., CARENCO, A., SIMON, J.C., VALIENTE, I., VASSALLO, C., and BILLES, L.: '1.55μm polarisation insensitive InGaAsP strained MQW optical amplifier integrated with short spot-size converter', Electron. Lett., 1996, 32, (15), pp. 1403-1405
6. JOMA, M., HORIKAWA, H., XU, CQ., YAMADA, K., KATOH, Y., and KAMIJOH, T.: 'Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure', Appl. Phys. Lett, 1993, 62, (2), pp. 121-122
7. DOUSSIERE. P., GARABEDIAN, P., GRAVER, C., BONNEVIE, D., FILLION, T., DÉROIN, E., MONNOT, M., PROVOST, J.G., LECLERC, D., and KLENK, M.: '1.55μm polarisation independant semiconductor optical amplifier with 25 dB fiber to fiber gain', IEEE Photonics Technol. Lett., 1994, 6, (2), pp. 170-172
8. EMERY, J.Y., DOUSSIÈRE, P., GOLDSTEIN, L., POMMEREAU, F., FORTIN, C., N'GO, R., TSCHERPNER, N., LAFRAGETTE, J.L., AUBERT, P., BRILLOUET, F., LAUBE, G., and BARRAU, J.: 'New, process tolerant, high performance 1.55μm polarization insensitive semiconductor optical amplifier based on low tensile bulk GaInAsP'. European Conf. Opt. Commun. (ECOC), Oslo, Norway, 1996, Paper WeD.2.3
9. LEALMAN, I.F., et al.: '1.56μm InGaAsP/InP tapered active layer multiquantum well laser with improved coupling to cleaved singlemode fibre', Electron. Lett., 1994, 30, (11), pp. 857-859